Abstract
A novel GaAs n +- n-δ( p +)- n- p +- n-δ( p +)- n- n + double heterojunction triangular barrier structure with two Al 0.3G 0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and an npn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.
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