Abstract
A novel integrated two terminal structure of Quantum Well Infrared Photodetector (QWIP) with bias controlled dual-band detection at the long wavelength infrared (LWIR) and near infrared (NIR) atmospheric windows is demonstrated. The LWIR sensor is based on a GaAs/AlGaAs standard QWIP, while the NIR sensor is based on a strained InGaAs/GaAs quantum wells structure. The InGaAs/GaAs quantum wells are embedded in a heterostructure bipolar transistor (HBT) structure, which enables high gain and rapid switching capabilities between the two spectral bands. The GaAs/AlGaAs and InGaAs/GaAs monolithic structure allows fabrication of large focal plane array (FPA) that can be operated using a standard two-terminal readout circuit (ROIC). Such FPA configuration allows simultaneous imaging of a NIR laser spot superimposed on a thermal imaging scene.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
