Abstract
ABSTRACTThe main aim of this tutorial is to apprise readers about parameter extraction and bias-point calculation using Enz–Krummenacher–Vittoz compact metal oxide semiconductor (MOS) model equation. The model equation has been applied to an NMOS (N-channel metal oxide semiconductor) transistor case present on the P-substrate and P-well. Two cases are considered to show parameters extraction and bias-point calculation for a modified/unmodified value of the transistor threshold voltage. After presenting equation simplification for the two cases, different parameter extraction methods are discussed. Then a common drain configuration biased by a resistance is simulated to match by hand-calculated results.
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