Abstract
This paper presents the results of an investigation into the effect of lattice temperature on the breakdown voltage of silicon pn junctions. Measurements have been made over the temperature range 4-2-300° K using devices with nominal breakdown voltages from 8 to 13 v. Results show that the influence of temperature can be separated into three distinct temperature intervals. For temperatures greater than 100° K the carrier mean free path is the controlling factor of the ionization rate and causes the voltage to decrease with decrease of temperature. At low temperatures (less than 30° k) the breakdown voltage increases with cooling because freeze out of carriers in the base allows a significant voltage to be developed across this region. Calculations involving this voltage drop enable the field required for ionization of impurities to be evaluated. In the intermediate temperature range traps are observed by studying microplasma noise and these appear to influence the ionization rate. In addition to the break...
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