Behavior of hydride species on Si surface during methane plasma irradiation investigated by in-situ infrared spectroscopy

Abstract

We have investigated the behavior of silicon- and carbon-hydride species on the hydrogen-terminated Si(100) surface, during exposure to hydrogen-diluted methane plasma at room temperature, using infrared absorption spectroscopy (IRAS) in the multiple internal reflection (MIR) geometry. We have measured IRAS spectra in the SiH and CH stretching vibration regions of the Si surface that was irradiated by hydrogen-diluted methane plasma. IRAS data demonstrated that at the initial stage of methane plasma exposure, atomic hydrogen and CH 3 radicals stick on the H-terminated surface to increasingly generate C-substituted hydride species, and eventually one monolayer of C-containing hydride species is formed. At this stage of plasma exposure, atomic hydrogen and CH 3 radicals attack the Si surfaces to create the so-called SiH n complex at sub-surface regions. A prolonged exposure to methane plasma induced an additional deposition of CH x species onto the monolayer of C-containing hydride species.