Abstract
Reflectivity variations during phase-transition between amorphous and crystalline states of a Bi-doped GeTe-Sb 2 Te 3 pseudo-binary compound film is investigated with sub-nanosecond laser pulses using a pump-and-probe technique. We also use a two-laser static tester to estimate the onset time of crystallization under a 2.0-μs-pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in about one nanosecond, but crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole on the phase-change film.
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