Abstract
Beam deflection and amplitude modulation of 10.6-μm guided waves by photoinjected free carriers are demonstrated in thin-film GaAs–AlGaAs heterostructure waveguides. At high injection levels (N ≳ 5 × 1017 cm−3), amplitude modulation (up to 100%) of the 10.6-μm guided wave dominates, but at lower injection levels beam deflection is dominant. External deflection angles of the order of 1° are obtained with nanosecond response times.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
