Be+ and BeF + Implants in GaAs Using Ions Produced from Solid‐Gas Reaction

Abstract

Be implantation is widely used for p‐type doping in III–V semiconductors. Physical sputtering of solid Be may result in some beam instability and low beam current, while solid sources such as require heating to achieve high vapor pressure. This work discusses implantation with Be+ and ions produced via plasma‐etching of solid Be with fluorine‐containing gases. Etching of Be with produced Be+ and ions with currents 10 times and 55 times higher than that of Be+ from the physical sputtering process, respectively. Activation of Be implanted as Be+ from the new process is comparable to those of the other processes. Activation of Be implanted as exhibited higher activation energy and lower activation efficiency. The implant still provides reasonable activation for source/drain and buried layer formation under acceptable annealing conditions. The lower effective Be+ implant energy of the implant allows shallow implant depths to be realized.