Abstract
Bandgap engineering of advanced optoelectronic devices is a natural and desired outcome of the basic studies of semiconductor quantum well structures. This is first illustrated with the problem of the polarization sensitivity of guided-wave devices. It is shown that tensile-strained quantum wells near the light- and heavy-hole degeneracy provide almost equal absorption spectra and nearly identical electroabsorption curves in the TE and TM modes, which are necessary features for on-line applications in optical fibre telecommunication systems. In the second part, the ultimate performances of photovoltaic bistable devices based on the Wannier - Stark effect are discussed. It is shown that the commutation energy of today's silicon MOSFETs can be challenged by usable optical devices.
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