Abstract
A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as γ0 = 3.1 eV, γ1 = 0.39 eV, and γ4 = 0.22 eV.
Highlights
Quasiparticle interference in metals results in standing waves in the local density of states (LDOS) whose properties reflect both the nature of the defect scatterer and the underlying electronic properties of the material itself
They have recently been examined in monolayer graphene as well, where a step in a hexagonal boron nitride substrate acted as the scatterer.[3]
The Friedel oscillations in Bernal-stacked bilayer graphene are expected to be of unusual nature as those observed in monolayer graphene
Summary
Quasiparticle interference in metals results in standing waves in the local density of states (LDOS) whose properties reflect both the nature of the defect scatterer and the underlying electronic properties of the material itself. Glen Birdwell,[7] Yu-An Chen,[2] Kenji Watanabe,[8] Takashi Taniguchi,[8] Su Ying Quek,[4,5] Pablo Jarillo-Herrero,[2] and Brian J.
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