Abstract
We first reported the hetero-epitaxial growth with good lattice matching of cubic structure La2O3 dielectric ultra-thin films on InP substrates by PLD. Epitaxial relationship between the La2O3 film and InP substrate, namely [001]La2O3||[001]InP and [012]La2O3||[012]InP, and cross-section of the stack without interface layer have been revealed by RHEED and HRTEM. The band offset for La2O3/InP is evaluated to be 1.62 eV for valence band and 2.61 eV for conduction band by XPS. A leakage current of 2 × 10−4 A/cm2 at bias voltage of −1 V and small equivalent oxide thickness of 0.3 nm have been measured on the capacitors with W/La2O3/InP/Al stack.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
