Abstract
Energy band alignment at the interface between carbon nanotubes (CNTs) and n-type 6H-SiC formed by the surface decomposition of SiC was investigated using high-resolution photoelectron spectroscopy (PES). Valence band spectra of the CNT films showed a Fermi edge, indicating metallic character. PES results revealed that a Schottky barrier was formed at the interface and the barrier height was 1.38 eV. Current-voltage measurements of the interface showed rectifying behavior, which was consistent with the PES results.
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