Back-irradiation photonic sintering for defect-free high-conductivity metal patterns on transparent plastic

Abstract

Photonic sintering has attracted considerable attention for printed electronics. It irradiates high-intensity light onto the front surface of metal nanoparticle patterns, which often causes defects such as delamination, cavities, and cracks in the patterns. Here, a back-irradiation photonic sintering method is developed for obtaining defect-free high-conductivity metal patterns on a transparent plastic substrate, through which high-intensity light is irradiated onto the back surface of the patterns for a few milliseconds. Ag patterns back-irradiated with ∼10.0 J cm−2 are defect-free in contrast to front-irradiated patterns and exhibited an electrical conductivity of ∼2.3 × 107 S m−1. Furthermore, real-time high-speed observation reveals that the mechanisms that generate defects in the front-irradiated patterns and prevent defects in the back-irradiated patterns are closely related to vapor trapping. In contrast to the latter, in the former, vapor is trapped and delaminates the patterns from the substrate because the front of the patterns acts as a barrier to vapor venting.