Abstract
AbstractOn p. 2626ff. of this issue, Z. Liliental‐Weber et al. report on the microstructure of InGaN thin films of different thickness with the nominal In concentration close to 10%. Both photo‐ (PL) and cathodoluminescence (CL) studies on the thin samples (<100 nm) show one band edge. However, multiple luminescence peaks emerge when the electron beam is placed in the defective area of films thicker than 100 nm. Transmission electron microscopy (TEM) studies show formation of high density of planar defects in the thicker samples. The authors suggest that these PL and CL peaks can originate from defects as well as regions with different atomic arrangements.The first author, Z. Liliental‐Weber is a Senior Staff Scientist in the Lawrence Berkeley Laboratory, Berkeley, USA, where she is working on structural defects characterization in semiconductors using TEM, the defects influencing optical properties of these materials. Her current scientific interests are III‐nitrides (thin layers and nanostructures) (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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