Abstract
This study addresses low- and high-doped ultra-thin body and buried oxide silicon-on-insulator (UTBB-SOI) nFETs related to back biases and reliability. The low-doped device shows wider tuning range and lower subthreshold and gate leakage despite lower transconductance. Positive bias temperature instability in low-doped UTBB-SOI degraded lower than that in high-doped device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
