Abstract
Thin films of different compositions within the (Ba x ,Sr 1− x )TiO 3 solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd) 2, Ba(thd) 2 and Ti(O-i-Pr) 2(thd) 2 precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO 3 films. Finally, the growth of SrTiO 3 on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed.
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