Abstract
All transparent metal oxide photoelectric device was fabricated with structure of Ag nanowire/NiO/ZnO/AZO/FTO by magnetron sputtering system. In order to achieve p/n junction, p-type NiO was deposited onto the n-type ZnO layer. The AZO (Aluminium-doped zinc oxide) was applied as buffer layer for effective transport and collection of the photo-induced electrons. Under light illumination, electrons and holes are generated in the hetero-junction of p-type NiO and n-type ZnO. The AZO layer between ZnO and NiO layers induces the efficient carrier collection from the ZnO side to the negative electrode, due to the similar structure of AZO to ZnO. In addition, the AZO insertion layer is efficient to suppress the loss of hole carriers, resulting in the low leakage current value. The overall transparency of the Ag nanowire/NiO/ZnO/AZO/FTO device is about 70% for visible light range, and thus which can be applied in the invisible transparent electronics, including photodetectors and solar cells.
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