Automating the inspection process for reticles, masks and wafers: Awamura, D pp 64–68

Abstract

In this paper, we report on the fabrication and characterization of voltage configurable nanowire field-effect-transistor (NWFET) devices suitable to broaden the flexibility in circuit design, e.g. for reconfigurable logic. Silicon NW-structures with mid-gap Schottky source and drain (S/D) junctions on silicon-on-insulator (SOI) substrate have been fabricated as unipolar complementary metal–oxide–semiconductor (CMOS) transistors. The desired device type, i.e. NMOS or PMOS, is selected by applying an appropriate back-gate bias. The programming capabilities of the devices fabricated using this approach are demonstrated experimentally using a freely configurable CMOS-NWFET inverter circuit on a MultiSOI-substrate like set-up.