Abstract
In this paper, a new nonlinear transistor modeling technique for gallium arsenide high-electron mobility transistor (GaAs HEMT) is proposed. The technique includes an analytical extraction, enhanced by applying nonlinear least squares regression and modified-median method, and a multistage optimization, allowing completely automatic large-signal modeling. Convergence of the technique is proved by a threefold model building procedure followed by the comparison of simulated data like IV-curve and load-pull contours. A 0.15 μm GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multiple bias S-parameters and power characteristics. A good agreement with the measured data proves that the proposed technique enables automatic nonlinear transistor modeling for power MMIC amplifier design.
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