Abstract
From the technological point of view the main task is to achieve a regular shape, good crystallographical and electrical parameters in the crystal growth process. The GaAs single crystals grown by the technology of Liquid Encapsulated Czochralski (LEC) generally have satisfactory parameters if the process is strictly controlled. In this paper we have tried to investigate the possibility of the accurate control of the diameter of the GaAs crystal in a high pressure Galaxy type puller, made by LPA, France.
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