Abstract
AbstractWe investigate an atomically rough single GaInAs/GaAs quantum well by means of autocorrelation spectroscopy. The data are based on thousands of individual low‐temperature nano‐photoluminescence spectra and exhibit a peak around 1.8 meV energy difference. On the same sample, we measure the topography of one of the buried heterointerfaces which is possible by using highly‐selective etching and atomic force microscopy.
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