Abstract
A theory is developed of the Auger recombination occurring in a piezoelectric semiconductor propagated by an intense acoustic noise flux. The calculation of the Auger coefficient is carried out within the classical approach to the piezoelectric noise field and for the case of nondegenerate carrier statistics. Then a simple analytic expression of the Auger coefficient is derived, which exhibits a linearly exponential function of the flux intensity. The screening effect of charge carriers is shown to be of great importance. The Auger recombination is found to be strongly enhanced as compared to that in the appropriate noiseless sample up to several orders of magnitude at large flux intensity, low temperature and small carrier concentration. Thus this gives another example illustrating the earlier statement that the Auger transition might still be one of the leading recombination mechanisms for disordered systems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
