Abstract
TiN x and TiC x films were deposited by the activated reactive evaporation process under different process conditions. The films were studied by Auger electron spectroscopy and Rutherford backscattering spectroscopy (RBS); standards were used for both techniques. The RBS techniques showed low sensitivity to carbon and nitrogen when 1.8 MeV He + ions were used. The sensitivity was enhanced by using 1.5 MeV H + ions, but the resulting non-Rutherford scattering necessitated the use of standards although RBS is potentially a standardless method. A correlation was found between the chemical composition of TiN x and TiC x films and the partial pressures of N 2 and C 2H 2 respectively.
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