Abstract
HfO 2 films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO 2 films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350 °C. A slightly thinner HfO 2 film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeO x-passivated samples. The resulting electrical properties are explained by the physical thickness and stoichiometry of the interfacial layer.
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