Abstract
Copper is an alternative material to aluminum that has been used as an interconnection material in metallization for large-scale integrated circuits because of its favorable electrical conductivity (1.67 -cm) and superior resistance to electro-migration. Cu metallization by ECD (electrochemical deposition) requires a seed layer of Cu, which should have a continuous and smooth lm surface, in order to achieve Cu superlling. High-quality Cu thin lms were deposited on TiN/Si substrates by using a radio-frequency plasma-enhanced atomic layer deposition (RF-PEALD) technique and a hexa uoroacetylacetonate copper vinyltrimethoxysilane [(hfac)Cu(VTMOS)] precursor. The variation in the lm's growth mode with the substrate temperature was investigated at temperatures between 150 { 350 C. As the vertical growth rate increase at the temperatures above 200 C, forming a continuous thin lm is di cult and the resistivity increases due to voids between grains and due to surface scattering.
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