Abstract
Ga doped ZnO films were deposited at low temperature with atomic layer deposition at different temperatures with the novel precursor, hexakis (dimethylamino)gallium. The ZnO films prepared at 300 °C on GaN substrates are epitaxial, but the Ga doping deteriorates the crystallinity: the doped films are oriented polycrystalline. The films deposited at lower temperatures are polycrystalline in all cases. Post deposition annealing procedures were applied which improved the crystallinity of the layer and increased the mobility of the films.
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