Abstract
Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 °C. The highest field effect mobility was ∼13 cm2/V·s with on-to-off ratios of drain current ∼109–1010. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel layers grown at 170 °C showed better transistor properties than those grown at 120 °C. Channels with higher zinc to tin ratio (∼3–4) also performed better than ones with lower ratios (∼1–3).
Highlights
The Harvard community has made this article openly available
Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition (ALD)
The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator
Summary
The Harvard community has made this article openly available. Please share how this access benefits you. Atomic Layer Deposited Zinc Tin Oxide Channel for Amorphous Oxide Thin Film Transistors Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition (ALD).
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