Abstract
AbstractThe transport of dopants in semiconductors can often be described within an interstitial–substitutional or diffusion‐reaction mechanism, e.g. for Zn in GaAs and in InP. The interpretation of experimental data, e.g. SIMS profiles, is largely complicated by that a nonlinear diffusion equation with several not precisely known coefficients has to be solved. In order to circumvent the parameter fit via the numerical solution of such a differential equation, approximately it is solved by means of the integral balance method. The usefullness of this approach is demonstrated by comparison with experimental and numerical results.
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