Atomic depth distribution and growth modes of Sn on Si(1 1 1)–4×1-In and α-√3×√3-Au surfaces at room temperature

Abstract

Atomic depth distribution and growth modes of Sn on 4×1-In and α-√3×√3-Au surfaces were studied at room temperature by using reflection high-energy electron diffraction and characteristic X-ray spectroscopy measurements as functions of glancing angle θ g of the incident electron beam. In the growth of Sn on an α-√3×√3-Au surface, partial alloying between Au and Sn occurred after deposition of 1 ML of Sn. During further deposition of Sn, alloying between Au and Sn became more significant. During growth of Sn on a 4×1-In surface, alloying between Sn and In occurred, and a part of In segregated to the upper parts of the film.