Abstract
Temperature profiles for rapid thermal annealing of ion implanted material are analyzed using asymptotic methods. Although only rapid thermal annealing is discussed, these methods are also applicable to many other annealing processes. Formulas for effective diffusion distance and effective annealing time are given which correct for the deviations of actual annealing profiles from ideal annealing profiles. The three major deviations considered are (1) ramp terms, (2) rising plateaus, and (3) plateau overshoots. The analysis shows that even relatively small deviations can have sizable effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
