Abstract
The physical model of binary oxide memristor is developed using the Finite Element Method (FEM). Ion transport, through the device, is modeled according to the non-linear ionic transport phenomenon in nano-scale devices for high electric field. The main physical mechanisms incorporated in memristor operation are considered using the simulations obtained from the FEM model. Using this model, the asymmetry between set and reset switching times of memristor is discussed. Finally, the effects of temperature and device geometry on the switching behavior of memristor are investigated.
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