Abstract
In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET has a rectangular channel shape, whereas the DGA n-MOSFET has an extended rectangular shape at the edge of the source and drain, which affects its aspect ratio. In order to increase its practical use, a new aspect ratio model is proposed for the DGA n-MOSFET and this model is evaluated through three-dimensional simulations and measurements of the fabricated devices. The proposed aspect ratio model for the DGA n-MOSFET exhibits good agreement with the simulation and measurement results.
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