Abstract
The purpose of this work was to study and carry out glass etching of monocrystalline silicon using the Bosch method, acquaintance with the conditions of aspect-independent etching. The Bosch process was conducted using sulfur hexafluorideSF6 and perfluorocyclobutaneC4F8on OxfordInstrumentsPlasmaPro®Estrelas100. It was found that in order to level the problems that arise, it is necessary to vary the temporal relations of etching and passivation stages.
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