Abstract
The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of . Growth temperature and thickness of the GaAs epitaxial layer were and 1 , respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at shows double domain (). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, () with spot, and clear (). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.
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