Abstract
Hard X-ray photoemission spectroscopy experiments are attractive because they can probe more deeply. The paper reviews two topics on the non-destructive characterization of high-κ/high-μ gate stacks using hard X-ray (hν=7.94keV) photoemission spectroscopy. The first topic is the change in the compositional depth profiles and the chemical bonding states of HfO2/Si-cap/strained-Ge/Si0.5Ge0.5/Si(100) laminating structures. The second topic is the influence of various surface treatments (HF, (NH4)2S and HMDS treatments) and La2O3 interlayer insertion on the chemical bonding states at high-κ/In0.53Ga0.47As interface.
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