Abstract
Semi-insulating (SI) InP materials have been prepared via Fe-doping in liquid encapsulated Czochraski growth and high temperature annealing undoped InP, respectively. The SI-InP materials exhibit different electrical properties and thermal stability. Deep level defects in the material have been studied in order to understand the mechanism. It is found that the quality of SI-InP depends on the concentration of deep level defects with energy levels in the range of 0.1–0.4 eV within the band gap. SI-InP with negligible low concentration of the defects exhibits high mobility and good thermal stability. Fe-diffused SI-InP which is obtained by annealing in iron phosphide ambient contains very low concentration of the defects. The origin of the defects has been studied by comparing the influence of the Fe incorporation method and stoichiometry on the defects formation in the SI-InP materials. The results suggest an approach for an improvement of the growth of high quality SI-InP material.
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