Abstract
This paper presents the methodology of material parameters’ estimation for the dual-phase-lag (DPL) model at the nanoscale in modern integration circuit (IC) structures. The analyses and measurements performed were used in the unique dedicated micro-electro-mechanical system (MEMS) test structure. The electric and thermal domain of this structure was analysed. Finally, the silicon dioxide (SiO2) temperature time-lag estimation procedure is presented based on the scattering parameters measured by a vector network analyser for the considered MEMS structure together with the 2-omega method. The proposed methodology has the ability to estimate the time-lag parameter with high accuracy and is also suitable for the temperature time-lag estimation for other manufacturing process technologies of ICs and other insulation materials used for integrated circuits such as silicon nitride (Si3N4), titanium nitride (TiN), and hafnium dioxide (HfO2).
Highlights
The modelling and analysis of thermal and electromagnetic phenomena in integrated circuits (ICs) have great significance for the reliable design of modern nanoscale electronic structures and micro-electro-mechanical systems (MEMSs)
For the analysed MEMS test structure, which is presented in Figure 1c (τ T ∈ (50 ns, 120 ns) and τ q = 3 ns) with R2 = 0.999774
This paper includes electromagnetic and thermal analyses of the MEMS test structure developed to validate the DPL model based on the methodology and tools presented in [2]
Summary
The modelling and analysis of thermal and electromagnetic phenomena in integrated circuits (ICs) have great significance for the reliable design of modern nanoscale electronic structures and micro-electro-mechanical systems (MEMSs). The most important of them are as follows: continuous decrease of semiconductor technology nodes, design cost reduction of microelectronic systems, and application of modern transistors in ICs (e.g., a fin field-effect transistor—FinFET [1,2], a gate-all-around field-effect transistor—GAAFET [3], and a vertical-slit field-effect transistor—VeSFET [4]). The effective modelling and simulation methods of electromagnetic (EM) and thermal phenomena of integration circuits, micro-electro-mechanical systems (MEMSs), and. The verification of new simulation tools dedicated for the design of experimental application specific integrated circuits (ASICs). The first and last issues will be presented in the paper and are performed on scattering parameters measurements of a designed MEMS test structure with a printed circuit board (PCB) test board
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