Abstract
plasma has been applied for high-quality, low-defect anisotropic reactive ion etching (RIE) of submicrometre scale elements in AlGaAs/GaAs heterostructures. Raman spectroscopy and photoluminescence (PL) study of the RIE-etched GaAs show no structural damage. AlGaAs/GaAs quantum well wire (QWW) structures with width 20 - 30 nm and period 250 nm were fabricated using RIE and structure preparation for overgrowth in one RIE chamber. After overgrowth by a 10 - 50 nm thick layer of AlGaAs (or GaAsP) QWW structures show the same PL intensity as initial unetched single quantum well structures.
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