Abstract
This work shows how fast wafer-level reliability (fWLR) inline tests allow to quickly screen the intrinsic reliability of High-k / Metal Gate (HK/MG) process splits in an effective manner. Various Hf based gate stack compositions such as pure HfO 2 , Hf x Zr 1-x O 2 and Hf x Si 1-x O 2 are investigated from a reliability point of view. The main focus lies on PBTI (positive bias temperature instability) which is one of the most critical reliability concerns in current HK/MG stacks. As a key result, PBTI was found to improve when doping the HfO 2 with either silicon or zirconium. Since HK/MG technology also introduces more process parameters to be controlled, it is shown that with fWLR tests implemented in a wafer electrical test environment their influence on reliability can be evaluated much faster than with standard lab approaches.
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