Abstract
Abstract A novel physical vapor deposition (PVD) Cu reflow process with chemical vapor deposition (CVD) Ru liner was optimized for 10 nm generation interconnects and beyond. For these and future device generations, void-free Cu interconnects are a key requirement, and the PVD Cu reflow process improvements reported here provide significant advancement in enabling excellent Cu reflow performance. The Ru liner exhibited much better Cu reflow performance than a Ta liner by effectively suppressing Cu agglomeration during the Cu reflow process, likely due to a better adhesion to Cu. Reflow temperature and Ru thickness (continuity) are critical parameters for achieving good Cu reflow performance, and this optimized Cu reflow process with Ru liner did not show line top voids or sidewall voids, which are the two major void types often observed at this dimension when pursuing Cu fill with the conventional Cu seed and Cu plating fill scheme. Furthermore, this novel Cu reflow process exhibited an electromigration (EM) performance enhancement due to having better Cu fill quality.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
