Abstract
Satellite communication system consists of various subsystems to allow it to function efficiently. These subsystems require a number of electronic devices. The devices continuously send out signals or radio waves that are received by a receiver, which has a filter and only accepts those signals that are above the cutoff frequency. In this research work, a third order active high pass filter is designed with a CSDG MOSFET and operates within the EHF band (0.3 THz). The CSDG MOSFET makes use of Hafnium Silicate (HfSiO 4 ) as a dielectric material due to its wide band-gap and lower dielectric constant makes it ideal for this design. The gain and other parameters of the designed filter are analysed. In addition we look at how the forward current gain affects the overall gain of the circuit.
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