Abstract
The graded-base region of a conventional diffused-base transistor can be approximately modeled as two uniformly-doped regions, one heavily-doped near the surface and the other lightly-doped. This fundamental idea, combined with the Fletcher boundary conditions and the ambipolar approach, yields a one-dimensional analytical model for the graded-base transistor. For downward operation, this model—called the n+pp−n+ transistor model—has only slight advantages as compared with existing analytical models such as the conventional uniform-base transistor model. For upward operation, the n+pp−n+ transitor model has significant advantages.
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