Abstract
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model analysis, we present a general design principle for realizing AVH effect in antiferromagnetic monolayers, which involves the introduction of nonuniform potentials to break of PT symmetry. Using first-principles calculations, we further demonstrate this design principle by stacking antiferromagnetic monolayer MnPSe3 on ferroelectric monolayer Sc2CO2 and achieve the AVH effect. The AVH effect can be well controlled by modulating the stacking pattern. In addition, by reversing the ferroelectric polarization of Sc2CO2 via electric field, the AVH effect in monolayer MnPSe3 can be readily switched on or off. The underlying physics are revealed in detail. Our findings open up a new direction of research on exploring AVH effect.
Highlights
In recent years, following the discoveries of intrinsic physical properties associated with valley occupancy in two-dimensional (2D) lattices[10,11], rapid experimental and theoretical progress[12–46] has been made in the field of valleytronics at both the fundamental and applied levels
We show by model analysis that the realization of stable anomalous valley Hall (AVH) effect can be extended to single-layer materials with an antiferromagnetic order
Based on first-principles calculations, we further demonstrate this design principle by stacking antiferromagnetic monolayer MnPSe3 on ferroelectric monolayer Sc2CO2 and realize the AVH effect
Summary
Valley, characterizing energy extrema of conduction or valence band, is an emerging degree of freedom of carriers in condensedmatter materials[1,2]. Without the protection of PT symmetry, the valley spin splitting at the K and K′ valleys would be achieved (see Fig. 1b), rendering the observation of AVH effect.
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