Abstract
The effect of angle-resolved valence-band photoelectron spectra from adsorption of small amounts of Cs on InAs(100)4\ifmmode\times\else\texttimes\fi{}2 has been studied. It is shown that a bulk interband transition is totally quenched at a coverage of Cs that leaves the 4\ifmmode\times\else\texttimes\fi{}2 reconstruction practically intact. The surface order was monitored by low-energy electron diffraction and photoemission from surface states. A shift of the surface Fermi level to well above the conduction-band minimum is also observed. It is proposed that the resulting development of a two-dimensional electron gas at the surface affects the bulk states probed in photoemission.
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