Abstract
SiC films were prepared by mid-frequency (MF) magnetron sputtering with graphite and poly-silicon targets on polycrystalline Al2O3 substrate. XPS analysis shows that the ratio of C/Si may change from 3.24 to 1.21 by adjusting the distance between target and substrate. SEM and XRD were used to investigate the surface morphology and microstructure of SiC films changing with annealing temperature. Results show that the microstructure of SiC started to be crystallized when the annealing temperature run up to 1200°C, and the film adhesion increased from 31N to 53N with the temperature changing from as-deposited to 1200 °C annealing, respectively.
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