Abstract
We have investigated the mechanism of Hf silicidation from HfO2 gate insulators on Si by high-resolution core-level photoemission spectroscopy with detailed annealing-temperature controlling. We have found that the silicidation temperature depends on the difference of the chemical states at the interfacial layer. The Hf-silicate layer which is more stable than the SiO2 layer prevents the silicidation. In addition, silicidation processes also promote the formation of SiO2. Chemical shifts in core-level photoemission spectra depend on the interfacial-layer thickness and SiO2 concentration in the HfO2 top layer, which are tunable by detailed annealing temperature.
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