Abstract
This paper describes the time-dependent changes which occur in Al-Al oxide-Pb tunnel junctions as a result of voltage annealing with alternating polarity (AP). By examining changes in junction resistance, barrier parameters (barrier thickness, average barrier height, and the separation between barrier heights at the two electrodes), and inelastic electron tunneling (IET) peak intensities, one finds that some charge within the barrier is fairly mobile under the influence of AP voltage annealing while another portion appears to become trapped. Also, the IET intensity of the 118-meV Al–O stretching peak of the Al oxide was found to increase with decreasing barrier height.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
