Annealing effect on effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well

Abstract

The InP-based InGaAs/GaAsSb type II multiple quantum well is the system for developing optical devices for 2 – 3 μm wavelength regions. By doping nitrogen into InGaAs layers, the system becomes effective to fabricate the optical devices with longer wavelength. The epitaxial layers of InGaAsN/GaAsSb on InP substrates are grown by the molecular beam epitaxy. The electrical resistance has been measured as a function of the magnetic field up to 9 Tesla at several temperatures between 2 and 8 K. The effective mass is obtained from the temperature dependence of the amplitude of the Shubnikov-de Haas oscillations. We have reported the nitrogen concentration dependence of the effective mass on the InGaAsN/GaAsSb type II system. The effective mass increases as the nitrogen concentration increases from 0.0 to 1.5 %. In this report, the annealing effect on the effective mass is investigated. The effective mass decreases by the annealing. This result suggests that some amount of nitrogen atoms of the InGaAsN layers are considered to diffuse to the GaAsSb layers by the annealing.