Abstract
Deep level transient spectroscopy study shows that in electron-beam-irradiated n-type Si, E1 level (O-V complex), E2 level (double negative charge state of the divacancy) and E3 level (single charge state of the divacancy) are hardly annealed at as low a temperature as 120°C, while hydrogenation by boiling at 120°C (2 atm) dramatically reduces the concentrations of these levels. A new level emerges near 0.33 eV below the conduction-band edge Ec after boiling, which may be a radiation-induced defect-hydrogen complex.
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