Abstract

The electrical properties of both undoped and doped HgCdTe epitaxial layers grown by organometallic vapor phase epitaxy (OMVPE) using the interdiffused multilayer process have been studied. Undoped, as‐grown layers exhibited anomalous Hall‐effect behavior. However, after annealing in mercury vapor, classical single‐carrier n‐type characteristics were obtained with residual electron concentrations as low as 4×1014 cm−3. Extrinsic doping of OMVPE layers has been demonstrated using alkyl dopant precursors for both n‐type doping with indium and for p‐type doping with either antimony or arsenic. The electrical properties of these doped films were relatively unchanged by further mercury vapor annealing.

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